Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes

Comprehensive Investigation of Electrical and Optical Characteristics of InGaN-Based Flip-Chip Micro-Light-Emitting Diodes

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Micro-light-emitting diodes (micro-LEDs) have been regarded as the important next-generation display technology, and read more a comprehensive and reliable modeling method for the design and optimization of characteristics of the micro-LED is of great use.In this work, by integrating the electrical simulation with the optical simulation, we conduct comprehensive simulation studies on electrical and optical/emission properties of real InGaN-based flip-chip micro-LED devices.The integrated simulation adopting the output of the electrical simulation (e.

g., the non-uniform spontaneous emission distribution) as the input of the optical simulation (e.g.

, the emission source distribution) can here provide more comprehensive and detailed characteristics and mechanisms of the micro-LED operation than the simulation by simply assuming a simple uniform emission source distribution.The simulated electrical and emission properties of the micro-LED were well corroborated by the measured properties, validating the effectiveness of the simulation.The reliable and practical modeling/simulation methodology reported here shall be useful to thoroughly investigate the physical mechanisms and operation of micro-LED devices.